| PART |
Description |
Maker |
| 2N6132 2N6101 2N6491 2N6486 2N6487 2N6489 2N6099 2 |
NPN SILICON TRANSISTOR
NPN SILICON TRANSISTOR 15 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB
(2N6130 - 2N6134) NPN SILICON TRANSISTOR
Leaded Power Transistor General Purpose
Leaded Power Transistor Darlington
|
http://
ON Semiconductor
Central Semiconductor Corp.
Advanced Semiconductor
CENTRAL[Central Semiconductor Corp]
Central Semiconductor C...
|
| MJ802 |
High-Power NPN Silicon Transistor 30 A, 90 V, NPN, Si, POWER TRANSISTOR, TO-204AA
30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS 200 WATTS
|
Motorola, Inc.
ONSEMI[ON Semiconductor]
|
| 2SA1010 2SA1010-AZ 2SA10102 |
Silicon transistor
SILICON POWER TRANSISTOR
7 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-220AB SC-46, 3 PIN
|
NEC[NEC]
|
| MJE240 MJE243 MJE252 MJE254 MJE241 MJE242 MJE244 M |
Leaded Power Transistor General Purpose
COMPLEMENTARY SILICON POWER TRANSISTORS 4 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-126
(MJE250 - MJE254 / MJE240 - MJE244) COMPLEMENTARY SILICON POWER TRANSISTORS
From old datasheet system
|
Central Semiconductor, Corp.
CENTRAL[Central Semiconductor Corp]
http://
|
| D44H10 D45H11 D44H8 D45H8 D44H D45H10 D44H11 ON027 |
10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 80 VOLTS
Card Edge Connector; No. of Contacts:24; Pitch Spacing:0.156"; Contact Termination:Solder; Leaded Process Compatible:Yes; Mounting Hole Dia:0.128" RoHS Compliant: Yes 10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB
COMPLEMENTARY SILICON POWER TRANSISTORS 10 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220AB
10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60/ 80 VOLTS
10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 80 VOLTS
From old datasheet system
|
Motorola Inc
ONSEMI[ON Semiconductor]
MOTOROLA[Motorola Inc]
http://
|
| 2SD2163 |
Silicon power transistor
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED HIGH-CURRENT SWITCHING
|
NEC
|
| 2SB1430 |
Silicon power transistor
PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
|
NEC[NEC]
|
| STD13003 |
Switching Bipolar Power Transistor |Power Transistor |400V 1.5A 1.2W HFE8~40 开关功率晶体管|功率晶体管| 400V 1.5A的功率为1.2W HFE840
NPN Silicon Power Transistor
|
AUK, Corp.
AUK[AUK corp]
|
| 2SA1221 2SA1222 2SA1222-T 2SA1221-T 2SA1222K |
BJT
PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS
Silicon transistor
|
NEC Corp.
NEC[NEC]
|
| 2SA1647-Z 2SA1647-15 |
SILICON POWER TRANSISTOR
PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
|
Renesas Electronics Corporation
|
| 2SB1555B 2SB1555 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (DARLINGTON POWER TRANSISTOR) POWER AMPLIFIER APPLICATIONS
3-Pin, Ultra-Low-Power SC70/SOT µP Reset Circuits
|
TOSHIBA
|
| CEN-U10 |
NPN SILICON POWER TRANSISTOR 0.5 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-202
Leaded Power Transistor General Purpose
|
Central Semiconductor, Corp.
CENTRAL[Central Semiconductor Corp]
|
